Title of article
Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition
Author/Authors
Lee، نويسنده , , Cheol Jin and Park، نويسنده , , Jeunghee and Huh، نويسنده , , Yoon and Yong Lee، نويسنده , , Jeong، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
33
To page
38
Abstract
Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750–950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1776850
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