• Title of article

    Temperature effect on the growth of carbon nanotubes using thermal chemical vapor deposition

  • Author/Authors

    Lee، نويسنده , , Cheol Jin and Park، نويسنده , , Jeunghee and Huh، نويسنده , , Yoon and Yong Lee، نويسنده , , Jeong، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    6
  • From page
    33
  • To page
    38
  • Abstract
    Vertically aligned carbon nanotubes (CNTs) are grown on iron-deposited silicon oxide substrates by thermal chemical vapor deposition (CVD) of acetylene gas at the temperature range 750–950°C. As the growth temperature increases from 750°C to 950°C, the growth rate increases by four times and the average diameter also increases from 30 nm to 130 nm while the density decreases by a factor of about two. The relative amount of crystalline graphitic sheets increases progressively with the growth temperature and a higher degree of crystalline perfection can be achieved at 950°C. This result demonstrates that the growth rate, diameter, density, and crystallinity of CNT can be controlled with the growth temperature.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2001
  • Journal title
    Chemical Physics Letters
  • Record number

    1776850