• Title of article

    A computational study of the mechanism for self-assembly of N-pyrrolyl radicals on Si(1 0 0)-2×1

  • Author/Authors

    Luo، نويسنده , , Hongbo and Lin، نويسنده , , M.C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    6
  • From page
    219
  • To page
    224
  • Abstract
    We predict the structures and energies for the dissociative adsorption of pyrrole producing C4H4N radicals and H atoms on the Si(1 0 0)-2×1 surface by density functional cluster model calculations. The dissociative adsorption process was found to occur primarily by barrierless adsorption at an α-C atom followed by N–H dissociation and the isomerization of the radical, leading to the formation of aligned C4H4N species on the surface. Additionally, molecular adsorption reactions by [2+2] and [4+2] cycloaddition mechanisms are discussed. These cyclic adducts were predicted to be short-lived at room temperature and should not affect the formation of the aligned C4H4N radical layer.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2001
  • Journal title
    Chemical Physics Letters
  • Record number

    1776952