Title of article
A computational study of the mechanism for self-assembly of N-pyrrolyl radicals on Si(1 0 0)-2×1
Author/Authors
Luo، نويسنده , , Hongbo and Lin، نويسنده , , M.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
219
To page
224
Abstract
We predict the structures and energies for the dissociative adsorption of pyrrole producing C4H4N radicals and H atoms on the Si(1 0 0)-2×1 surface by density functional cluster model calculations. The dissociative adsorption process was found to occur primarily by barrierless adsorption at an α-C atom followed by N–H dissociation and the isomerization of the radical, leading to the formation of aligned C4H4N species on the surface. Additionally, molecular adsorption reactions by [2+2] and [4+2] cycloaddition mechanisms are discussed. These cyclic adducts were predicted to be short-lived at room temperature and should not affect the formation of the aligned C4H4N radical layer.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1776952
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