Author/Authors :
Liu، نويسنده , , Hsiang-Lin and Chen، نويسنده , , Chia-Chun and Chia، نويسنده , , Chih-Ta and Yeh، نويسنده , , Chun-Chia and Chen، نويسنده , , Chun-Ho and Yu، نويسنده , , Ming-Yuan and Keller، نويسنده , , Stacia and DenBaars، نويسنده , , Steven P.، نويسنده ,
Abstract :
Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ∼254 cm−1 is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron–phonon interaction in GaN nanowires.
