• Title of article

    Towards the synthesis of the high energy density material TdN4: excited electronic states

  • Author/Authors

    Lee، نويسنده , , Timothy J and Dateo، نويسنده , , Christopher E، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    8
  • From page
    295
  • To page
    302
  • Abstract
    Vertical electronic excitation energies for singlet states have been computed for the high energy density material TdN4 in order to assess synthetic routes that originate from excited states of N2 molecules. Based on linear response coupled-cluster calculations, the lowest six excited states are 9.35(1 1T1), 10.01(1 1T2), 10.04(1 1A2), 10.07(1 1E), 10.12(2 1T1), and 10.42(2 1T2) eV above the ground state. Comparison with the energies of excited states of N2+N2 fragments, leads us to propose that the most likely synthetic route for TdN4 involving this mechanism arises from combination of two bound quintet states of N2.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2001
  • Journal title
    Chemical Physics Letters
  • Record number

    1777597