Title of article
Towards the synthesis of the high energy density material TdN4: excited electronic states
Author/Authors
Lee، نويسنده , , Timothy J and Dateo، نويسنده , , Christopher E، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
8
From page
295
To page
302
Abstract
Vertical electronic excitation energies for singlet states have been computed for the high energy density material TdN4 in order to assess synthetic routes that originate from excited states of N2 molecules. Based on linear response coupled-cluster calculations, the lowest six excited states are 9.35(1 1T1), 10.01(1 1T2), 10.04(1 1A2), 10.07(1 1E), 10.12(2 1T1), and 10.42(2 1T2) eV above the ground state. Comparison with the energies of excited states of N2+N2 fragments, leads us to propose that the most likely synthetic route for TdN4 involving this mechanism arises from combination of two bound quintet states of N2.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1777597
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