Title of article :
Silane adsorption on Pd(100) – a low-temperature RAIRS study
Author/Authors :
Ennis، نويسنده , , C.J and Morton، نويسنده , , S.A and Sun، نويسنده , , L and Tear، نويسنده , , S.P and McCash، نويسنده , , E.M، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
8
From page :
217
To page :
224
Abstract :
Silane adsorption and reaction on Pd(100) have been investigated between 23–80 K by reflection–absorption infrared spectroscopy (RAIRS). Exposure to a silane/argon mixture at a substrate temperature of 23 K results in physisorbed islands of silane with argon matrix isolated silane in subsequent layers. At a substrate temperature of 70 K the silane forms a uniform physisorbed layer on the surface which undergoes dissociative chemisorption at ∼78 K. On Pd(100) a surface stabilised SiH moiety is formed; direct adsorption at 80 K leads to the formation of islands of SiH with overlayers of physisorbed molecular silane. The SiH species is stable to 200 K at which point complete dissociation occurs.
Journal title :
Chemical Physics Letters
Serial Year :
1999
Journal title :
Chemical Physics Letters
Record number :
1777827
Link To Document :
بازگشت