Title of article
Growth of n-alkane films on a single-crystal substrate
Author/Authors
Wu، نويسنده , , Z. and Ehrlich، نويسنده , , S.N. and Matthies، نويسنده , , B. and Herwig، نويسنده , , K.W. and Dai، نويسنده , , Pengcheng and Volkmann، نويسنده , , U.G. and Hansen، نويسنده , , F.Y. and Taub، نويسنده , , H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
7
From page
168
To page
174
Abstract
The structure and growth mode of alkane films (n-CnH2n+2; n=4, 6, 7) adsorbed on a Ag(1 1 1) surface have been investigated by synchrotron X-ray scattering. New models are proposed for the butane (n=4) and hexane (n=6) monolayer and butane bilayer structures. Specular reflectivity scans reveal that growth of all films is preempted between two and three layers by nucleation of bulk particles oriented with a single bulk crystal plane parallel to the film. In the case of butane, the bulk particles also have a fixed azimuthal relationship with the film resulting in complete epitaxy.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1778298
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