Title of article
Generation of high incident photon to current conversion efficiency by semiconductor sensitization of microcrystals of In2S3 on wide bandgap In2O3 pellets
Author/Authors
Sirimanne، نويسنده , , Prasad Manjusri and Sonoyama، نويسنده , , Noriyuki and Sakata، نويسنده , , Tadayoshi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
211
To page
215
Abstract
Generation of anodic photocurrent on In2S3|In2O3 electrodes was explained from the viewpoint of semiconductor sensitization. A very high incident photon to current conversion efficiency of 80% was achieved at an In2S3|In2O3 electrode in a polysulfide electrolyte.
Journal title
Chemical Physics Letters
Serial Year
2001
Journal title
Chemical Physics Letters
Record number
1778844
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