Author/Authors :
Shuttleworth، نويسنده , , I.G. and Fisher، نويسنده , , C.J. and Lee، نويسنده , , J.J. and Jones، نويسنده , , Robert G. and Woodruff، نويسنده , , D.P.، نويسنده ,
Abstract :
The structure of the Cu(1 1 1)-(3×3)-SiHx surface formed by reaction of silane (SiH4) with Cu(1 1 1) at 140 K, has been determined using normal incidence X-ray standing wave (NIXSW) analysis. The (3×3) phase, thought to comprise a mixture of SiH3 (2/9 ML) and SiH or Si species (1/9 ML), has all the surface silicon atoms located in hcp 3-fold hollow sites at a distance of 1.98±0.04 Å from the surface copper scatterer planes.
