Author/Authors :
Zou، نويسنده , , Z. and Wei، نويسنده , , X.M. and Liu، نويسنده , , Q.P. and Huang، نويسنده , , H.H. and Sim، نويسنده , , W.S. and XU، نويسنده , , G.Q. and Huan، نويسنده , , C.H.A.، نويسنده ,
Abstract :
Gaseous D-atoms are evidenced to react directly with adsorbed HS species, forming HD(g) and S remaining on the surface or HDS desorbing from the surface. On the other hand, exposing a D-covered GaAs(100) surface to H2S molecules causes a gradual decrease in the amount of adsorbed D-atoms and promotes the formation of HS(ad) without the observation of accompanying H(ad). The pure HS species covered surface generated by the coadsorption of H2S and D-atoms may lead to a more efficient S-passivation upon thermal annealing.
