Author/Authors :
Hsu، نويسنده , , W.K. and Li، نويسنده , , W.Z. and Zhu، نويسنده , , Y.Q. and Grobert، نويسنده , , N. and Terrones، نويسنده , , Sofia M. and Terrones، نويسنده , , H. and Yao، نويسنده , , N. and Zhang، نويسنده , , J.P. and Firth، نويسنده , , S. and Clark، نويسنده , , R.J.H. and Cheetham، نويسنده , , A.K. and Hare، نويسنده , , J.P and Kroto، نويسنده , , H.W and Walton، نويسنده , , D.R.M.، نويسنده ,
Abstract :
The arc discharge method has been used hitherto to encapsulate metal-containing structures within carbon nanotubes [1, 2], the arrangement of the nanotube walls playing an important role in the process. We show that KCl can be generated in the space between nanotube walls by treating potassium-intercalated uncapped tubes with CCl4. A relationship between the KCl crystal domain and the hexagonal carbon network is thought to give rise to preferential formation of a 100 plane perpendicular to the tube axes.
