Title of article :
Semiconducting B–C–N nanotubes with few layers
Author/Authors :
Golberg، نويسنده , , D and Dorozhkin، نويسنده , , P and Bando، نويسنده , , Y and Hasegawa، نويسنده , , M and Dong، نويسنده , , Z.-C، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
9
From page :
220
To page :
228
Abstract :
Perfectly ordered nanotubes (NTs) displaying a limited number of defect-free B–C–N shells (typically 2–4) were synthesized from CVD C NTs and a mixture of boron oxide and gold oxide placed in a flowing N2 atmosphere at ∼1950 K. The NTs were analyzed using field emission conventional and energy-filtered (Omega filter) high-resolution electron microscopes, and electron energy loss and energy dispersive X-ray spectrometers. NTs with inner diameters of 0.9–4.0 nm were frequently assembled in bundles consisting of several tubes and extending up to 1–2 μm in length. Two-terminal transport measurements on individual B–C–N nanotube bundles were carried out in-situ in a Fresnel projection microscope. The bundles displayed semiconducting behavior with an estimated band gap of ∼1 eV.
Journal title :
Chemical Physics Letters
Serial Year :
2002
Journal title :
Chemical Physics Letters
Record number :
1781156
Link To Document :
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