Title of article
Thin β-SiC nanorods and their field emission properties
Author/Authors
Zhou، نويسنده , , X.T and Lai، نويسنده , , H.L and Peng، نويسنده , , H.Y and Au، نويسنده , , Frederick C.K and Liao، نويسنده , , L.S. and Wang، نويسنده , , N and Bello، نويسنده , , I and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
58
To page
62
Abstract
Beta-silicon carbide (β-SiC) nanorods (diameter, ca. 5–20 nm; length, 1 μm) have been grown on porous silicon substrates by chemical vapor deposition with an iron catalyst. The turn-on field of the grown β-SiC nanorods on a porous silicon substrate is 13–17 V/μm.
Journal title
Chemical Physics Letters
Serial Year
2000
Journal title
Chemical Physics Letters
Record number
1781220
Link To Document