Title of article
Path integral molecular dynamics simulation of solid para-hydrogen with an aluminum impurity
Author/Authors
Dina T. Mirijanian، نويسنده , , Dina T and Alexander، نويسنده , , Millard H and Voth، نويسنده , , Gregory A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
7
From page
487
To page
493
Abstract
The equilibrium properties of an aluminum impurity trapped in solid para-hydrogen have been studied. The results were compared to those of a previous study by Krumrine et al. [J. Chem. Phys. 113 (2000) 9079] with an atomic boron. In the presence of vacancy defect, when the orientation-dependent Al–pH2 potential is used, the Al atom is displaced to a position half way between its original substituted site and the vacancy site. Thermodynamic results also indicate that the presence of a neighboring vacancy helps to stabilize the Al impurity to a far greater extent than in the case of the B impurity.
Journal title
Chemical Physics Letters
Serial Year
2002
Journal title
Chemical Physics Letters
Record number
1782403
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