Title of article :
A novel growth mode of alkane films on a SiO2 surface
Author/Authors :
Mo، نويسنده , , H. and Taub، نويسنده , , H. and Volkmann، نويسنده , , U.G. and Pino، نويسنده , , M. G. Ehrlich، نويسنده , , S.N. and Hansen، نويسنده , , F.Y. and Lu، نويسنده , , E. and Miceli، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
7
From page :
99
To page :
105
Abstract :
Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found previously for shorter alkanes deposited from the vapor phase onto solid surfaces.
Journal title :
Chemical Physics Letters
Serial Year :
2003
Journal title :
Chemical Physics Letters
Record number :
1782883
Link To Document :
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