Author/Authors :
Sun، نويسنده , , X.H. and Cheng، نويسنده , , L.F. and Liu، نويسنده , , M.W. and Liao، نويسنده , , L.S. and Wong، نويسنده , , N.B. and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T.، نويسنده ,
Abstract :
Work function variations of indium tin oxide (ITO) treated with solutions of iodine and bromine as well as bromine vapor were studied by ultraviolet and X-ray photoelectron spectroscopies. Interfaces between the treated ITO and NPB were also investigated. Treatments by iodine and bromine solutions, and bromine vapor led to work function increase by as much as 0.6, 0.7, and 0.9 eV, respectively. After the halogen treatments, the hole-injection barrier for the NPB/ITO contact was remarkably decreased. A light-emitting device fabricated with bromine vapor-treated ITO as anode clearly demonstrated better hole injection at the ITO/NPB interface and a lower drive voltage.
