Author/Authors :
Meng، نويسنده , , X.M. and Hu، نويسنده , , J.Q and Jiang، نويسنده , , Y. and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T.، نويسنده ,
Abstract :
Boron nanowires have been synthesized by laser ablation at high temperature. The as-synthesized boron nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and electron energy loss spectroscopy (EELS). The boron nanowires have lengths of several tens of micrometers long and diameters of 30–60 nm. The effects of the synthesis conditions on the formation of the boron nanowires were investigated and possible growth mechanisms of the boron nanowires are discussed.