Title of article
Boron nanowires synthesized by laser ablation at high temperature
Author/Authors
Meng، نويسنده , , X.M. and Hu، نويسنده , , J.Q and Jiang، نويسنده , , Y. and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
825
To page
828
Abstract
Boron nanowires have been synthesized by laser ablation at high temperature. The as-synthesized boron nanowires were characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and electron energy loss spectroscopy (EELS). The boron nanowires have lengths of several tens of micrometers long and diameters of 30–60 nm. The effects of the synthesis conditions on the formation of the boron nanowires were investigated and possible growth mechanisms of the boron nanowires are discussed.
Journal title
Chemical Physics Letters
Serial Year
2003
Journal title
Chemical Physics Letters
Record number
1783428
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