Author/Authors :
Jie، نويسنده , , Jiansheng and Wang، نويسنده , , Guanzhong and Han، نويسنده , , Xinhai and Yu، نويسنده , , Qingxuan and Liao، نويسنده , , Yuan and Li، نويسنده , , Gongpu and Hou، نويسنده , , J.G.، نويسنده ,
Abstract :
In-doped ZnO nanobelts were fabricated by thermal evaporation with assistance of gold catalyst. The nanobelts have high crystal quality and grow along [101̄0] direction with (0 0 0 1) dominated surface, and have an average In:Zn value of 1:30. A growth mechanism based on VLS is proposed to understand the nanobelts growth, explaining Au particles are only found at the ends of short narrow part of the nanobelts that are mostly uniform broad flat. The ZnO UV emission peak redshifting about 200 meV after doping gives an estimate of the carrier density in the doped ZnO nanobelts can be as high as 7 × 1019 cm−3.
