• Title of article

    Efficiency enhancement and retarded dark-spots growth of organic light-emitting devices by high-temperature processing

  • Author/Authors

    Chan، نويسنده , , M.Y and Lai، نويسنده , , S.L and Wong، نويسنده , , F.L and Lengyel، نويسنده , , O and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    7
  • From page
    700
  • To page
    706
  • Abstract
    Device stability and growth of dark spots are major concerns for the large-scale applications of organic light-emitting devices (OLEDs). OLEDs with crystalline hole-transporting layer have been fabricated by depositing organic layers at elevated substrate temperatures. Such devices showed significant improvement in electroluminescent efficiency, morphological stability, storage stability, and also retarded dark-spot growth. The lower hole mobility in crystalline NPB films is attributed to the improved device performance, leading to a better carrier balancing in the NPB/AlQ3 interface. Such crystalline NPB films also demonstrate a smoother surface, even after high-temperature annealing, and gives beneficial advantages for improving the thermal durability of OLEDs.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2003
  • Journal title
    Chemical Physics Letters
  • Record number

    1783749