Title of article
Efficiency enhancement and retarded dark-spots growth of organic light-emitting devices by high-temperature processing
Author/Authors
Chan، نويسنده , , M.Y and Lai، نويسنده , , S.L and Wong، نويسنده , , F.L and Lengyel، نويسنده , , O and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
7
From page
700
To page
706
Abstract
Device stability and growth of dark spots are major concerns for the large-scale applications of organic light-emitting devices (OLEDs). OLEDs with crystalline hole-transporting layer have been fabricated by depositing organic layers at elevated substrate temperatures. Such devices showed significant improvement in electroluminescent efficiency, morphological stability, storage stability, and also retarded dark-spot growth. The lower hole mobility in crystalline NPB films is attributed to the improved device performance, leading to a better carrier balancing in the NPB/AlQ3 interface. Such crystalline NPB films also demonstrate a smoother surface, even after high-temperature annealing, and gives beneficial advantages for improving the thermal durability of OLEDs.
Journal title
Chemical Physics Letters
Serial Year
2003
Journal title
Chemical Physics Letters
Record number
1783749
Link To Document