Large-scale synthesis of gallium nitride nanosaws using a chemical vapor deposition method

A large quantity of GaN nanostructures (nanosaws) was produced by a chemical vapor deposition of Ga/Ga2O3/B2O3 mixture under NH3 flow. All of them have a single-edged sawlike configuration. The average width of the nanosaw is in the range 100 nm–1 μm and the thickness is about 1/10 of the average width. They consist of single-crystalline wurtzite structure with the [0 1 1] direction parallel to the long axis and the [0 0 1] direction perpendicular to the edge of saw teeth. The jagged edges are in an angle of 100°–110°. The room-temperature cathodoluminescence exhibits a strong band-edge emission at 3.46 eV.