Title of article
Rational growth of highly oriented amorphous silicon nanowire films
Author/Authors
Chen، نويسنده , , Xihong and Xing، نويسنده , , Yingjie and Xu، نويسنده , , Jun and Xiang، نويسنده , , Jie and Yu، نويسنده , , Dapeng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
5
From page
626
To page
630
Abstract
Amorphous silicon nanowire films were rationally synthesized using a simple approach. The films consist of highly oriented nanowires of 30 μm in length and 20–80 nm in diameter. The morphology, microstructure features, and chemical composition of the nanowires were analyzed using electron microscopy and Raman spectroscopy. A novel model concerning solid–liquid–solid phases was proposed to explain the growth mechanism of the nanowires. This approach should be very useful to direct the controlled growth of nanomaterials.
Journal title
Chemical Physics Letters
Serial Year
2003
Journal title
Chemical Physics Letters
Record number
1784859
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