Title of article :
Rational growth of highly oriented amorphous silicon nanowire films
Author/Authors :
Chen، نويسنده , , Xihong and Xing، نويسنده , , Yingjie and Xu، نويسنده , , Jun and Xiang، نويسنده , , Jie and Yu، نويسنده , , Dapeng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
626
To page :
630
Abstract :
Amorphous silicon nanowire films were rationally synthesized using a simple approach. The films consist of highly oriented nanowires of 30 μm in length and 20–80 nm in diameter. The morphology, microstructure features, and chemical composition of the nanowires were analyzed using electron microscopy and Raman spectroscopy. A novel model concerning solid–liquid–solid phases was proposed to explain the growth mechanism of the nanowires. This approach should be very useful to direct the controlled growth of nanomaterials.
Journal title :
Chemical Physics Letters
Serial Year :
2003
Journal title :
Chemical Physics Letters
Record number :
1784859
Link To Document :
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