• Title of article

    Rational growth of highly oriented amorphous silicon nanowire films

  • Author/Authors

    Chen، نويسنده , , Xihong and Xing، نويسنده , , Yingjie and Xu، نويسنده , , Jun and Xiang، نويسنده , , Jie and Yu، نويسنده , , Dapeng، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2003
  • Pages
    5
  • From page
    626
  • To page
    630
  • Abstract
    Amorphous silicon nanowire films were rationally synthesized using a simple approach. The films consist of highly oriented nanowires of 30 μm in length and 20–80 nm in diameter. The morphology, microstructure features, and chemical composition of the nanowires were analyzed using electron microscopy and Raman spectroscopy. A novel model concerning solid–liquid–solid phases was proposed to explain the growth mechanism of the nanowires. This approach should be very useful to direct the controlled growth of nanomaterials.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2003
  • Journal title
    Chemical Physics Letters
  • Record number

    1784859