Title of article :
Interface gap states of 8-hydroxyquinoline aluminum induced by cesium metal
Author/Authors :
Fung، نويسنده , , M.K and Lai، نويسنده , , S.L. and Tong، نويسنده , , S.W and Bao، نويسنده , , S.N and Lee، نويسنده , , C.S. and Lee، نويسنده , , S.T، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
40
To page :
43
Abstract :
Ultra-violet photoemission spectroscopy (UPS) showed no Cs-induced gap states at the interface when tris-(8-hydroxyquinoline) aluminum (Alq3) was deposited on sub-monolayer Cs metals coated on Ag substrate. When Cs coating approached one monolayer, UPS detected a new state in the gap at 1.7 eV above the HOMO of Alq3, similar to the case of direct Cs deposition on Alq3. The observation is consistent with a strong and localized interaction between Cs and Ag. At low Cs coverage, all Cs interacted and were tied up with the Ag, leaving no free Cs to interact with Alq3, whereas at higher coverage some free Cs interacted with Alq3, giving rise to the Cs-induced gap states.
Journal title :
Chemical Physics Letters
Serial Year :
2004
Journal title :
Chemical Physics Letters
Record number :
1784892
Link To Document :
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