Title of article :
Intensive blue-light emission from semiconductor GaN nanowires sheathed with BN layers
Author/Authors :
Zhang، نويسنده , , Jun and Zhang، نويسنده , , Lide and Jiang، نويسنده , , Feihong and Dai، نويسنده , , Zhenhong، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
423
To page :
427
Abstract :
Semiconductor GaN nanowires, sheathed with BN layers, were successfully synthesized by a simple chemical vapor deposition. The experimentally determined structure consists of a hexagonal wurtzite GaN core, and the outer shell of BN separated in the radial direction. The GaN-BN assembly-structure was about 40–50 nm in diameter and up to several hundreds of micrometers in length. The photoluminescence spectrum of the GaN-BN assembly-structure shows a very strong and broad blue-light emission, centered at 464 nm. The assembly-structures with semiconductor–insulator geometry, which take advantage of this self-organization mechanism for multi-element nanotube formation, have great prospects in fundamental physical science and applications in nanoscale optoelectronic devices (such as nanolasers).
Journal title :
Chemical Physics Letters
Serial Year :
2004
Journal title :
Chemical Physics Letters
Record number :
1784959
Link To Document :
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