Author/Authors :
Huh ، نويسنده , , Y. and Lee، نويسنده , , J.Y. and Lee، نويسنده , , J.H and Lee، نويسنده , , T.J. and Lyu، نويسنده , , Samuel S.C. and Lee، نويسنده , , C.J.، نويسنده ,
Abstract :
We have achieved selective growth of high-purity carbon nanotubes (CNTs) on iron-deposited hole-patterns by thermal chemical vapor deposition (CVD) of acetylene gas. The vertically well-aligned CNTs were uniformly synthesized with good selectivity on hole-patterned silicon substrates. The CNTs indicated multiwalled and bamboo-like structure. The turn-on gate voltage at the CNT-based triode structure was about 55 V and emission current density was 2.0 μA at the applied gate voltage of 100 V.
