Title of article :
Anisotropic compressibility and expansivity in layered GeSe2
Author/Authors :
Stّlen، نويسنده , , S and Grzechnik، نويسنده , , A and Grande، نويسنده , , T and Mezouar، نويسنده , , M، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
4
From page :
249
To page :
252
Abstract :
Unit-cell dimensions of layered GeSe2 (P21/c, Z=16) are determined isothermally and isobarically by in situ high-temperature and high-pressure angle-dispersive X-ray diffraction. The isothermal bulk modulus KT, from a third-order Birch–Murnaghan equation of state with its first pressure derivative KT′=9.1±2.2, is 11.5±2.2 GPa (T=573 K, 0.0001 GPa≤P≤3.9 GPa). The isobaric volume expansivities αP are (9.03×10−5−7×10−9T)±0.3×10−5 K−1 and (8.39×10−5−7×10−9T)±0.3×10−5 K−1 at P=0.0001 GPa (298 K≤T≤773 K) and 1 GPa (298 K≤T≤614 K), respectively. Both the compressibility and the expansivity are largely anisotropic due to the two-dimensional structure of this compound.
Keywords :
D. Thermal expansion , E. Strain , High pressure , E. Synchrotron radiation , A. Semiconductors
Journal title :
Solid State Communications
Serial Year :
2000
Journal title :
Solid State Communications
Record number :
1785703
Link To Document :
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