Title of article
Transport properties of bismuth-doped β-lead dioxide
Author/Authors
Fu، نويسنده , , W.T and Martens، نويسنده , , H.C.F، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
423
To page
426
Abstract
The solid solution of β-Pb1−xBixO2 for 0≤x≤0.4 has been prepared electrochemically. The electrical conductivity of β-PbO2 is semi-metallic with room temperature resistivity of about 3×10−3 Ω cm; but the Bi-doped samples are more resistive and the resistivity follows a power-law behaviour. Despite the similarity of electronic structure between β-PbO2 and BaPbO3, the charge carriers introduced by Bi are localised and the β-Pb1−xBixO2 system does not become superconducting down to 2 K.
Keywords
B. Chemical synthesis , D. Electronic transport , C. Crystal structure and symmetry
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1785758
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