Title of article
Growth and microstructure of Ga2O3 nanorods
Author/Authors
Han، نويسنده , , W.Q and Kohler-Redlich، نويسنده , , P and Ernst، نويسنده , , F and Rühle، نويسنده , , M، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
3
From page
527
To page
529
Abstract
Gallium oxide (Ga2O3) nanorods were prepared by a dc arc-discharge between a graphite anode filled with a mixture of GaN, graphite and nickel powders and a graphite cathode in helium atmosphere. The structure and composition of the product were determined by high-resolution transmission electron microscopy and high spatial resolution electron energy-loss spectroscopy. The Ga2O3 nanorods have diameters in the range of 5–50 nm and a length of up to 30 μm. Specific features of their microstructure and the growth mechanism are discussed.
Keywords
A. Nanostructures , E. Electron energy loss spectroscopy , B. Crystal growth , C. Scanning and transmission electron microscopy
Journal title
Solid State Communications
Serial Year
2000
Journal title
Solid State Communications
Record number
1785832
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