Title of article :
Absorption coefficient of wurtzite GaN calculated from an empirical tight binding model
Author/Authors :
Jogai، نويسنده , , B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The linear absorption coefficient for polarizations parallel and perpendicular to the c-axis of wurtzite GaN is calculated by integrating the momentum matrix element over the full Brillouin zone using a fundamental numerical technique. The energy band structure and wave functions required for this calculation are obtained using an sp3d5–sp3 empirical tight-binding method (ETBM) that includes the spin–orbit and up to second-nearest-neighbor interactions. The model reproduces the selection rules expected from symmetry considerations.
Keywords :
A. Semiconductors , A. Thin films , D. Electronic band structure , D. Spin–orbit effects
Journal title :
Solid State Communications
Journal title :
Solid State Communications