Title of article :
Spectroscopic ellipsometry study of SiC/Si heterostructures formed by high-dose C+ implantation into silicon
Author/Authors :
Yang، نويسنده , , Shenghong and Chen، نويسنده , , Dihu and Li، نويسنده , , Huiqui and Zhang، نويسنده , , Yueli and Mo، نويسنده , , Minh Dang and Wong، نويسنده , , S.P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
SiC/Si heterostructures formed by C + implantation into Si with different implant energy (35 and 65 keV) were studied by spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (XTEM). The measured SE spectra (2.3–5.0 eV) were analyzed with appropriate multi-layer models and the Bruggeman effective medium approximation (B-EMA). The results showed that the measured spectra could be well simulated by using a multi-layer structure model. The thickness and composition of the layers were determined. Optical constants (n and k values) of the buried β-SiC formed by ion beam synthesis in photon energy of 2.3–5.0 eV were first obtained by SE calculation.
Keywords :
A. Nanostructure , B. Nanofabrication , C. Scanning and transmission electron microscopy , E. Light absorption and reflection
Journal title :
Solid State Communications
Journal title :
Solid State Communications
