Title of article :
Concentration profile of MeV Ni+ ions in LiNbO3 and KTiOPO4 determined by SIMS
Author/Authors :
Wang، نويسنده , , Ke-Ming and Hu، نويسنده , , Hui and Chen، نويسنده , , Feng and Shi، نويسنده , , Bo-Rong and Cue، نويسنده , , N and Wong، نويسنده , , Philip C.L and Wong، نويسنده , , Catherine Y.C and Shen، نويسنده , , Ding-Yu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
551
To page :
555
Abstract :
LiNbO3 and KTiOPO4 were implanted with 2.0 MeV Ni+ ions at several incident angles and a fluence of 8×1014 ions/cm2. The concentration profiles of implanted Ni+ were measured by secondary ion mass spectrometry (SIMS). The experimental Ni+ concentration profiles are compared with the Pearson IV and TRIM’90 (Transport of Ions in Matter 1990) simulations. The correlation between the profiles of Ni+ concentration and refractive index is discussed for LiNbO3 and KTiOPO4 waveguides.
Keywords :
D. Radiation effects , A. Insulators , E. Helium surface scattering
Journal title :
Solid State Communications
Serial Year :
2000
Journal title :
Solid State Communications
Record number :
1786233
Link To Document :
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