Author/Authors :
Ryu، نويسنده , , M.-Y and Yu، نويسنده , , John Y.J. and Shin، نويسنده , , E.-j and Yu، نويسنده , , P.W and Lee، نويسنده , , J.I and Yu، نويسنده , , S.K and Oh، نويسنده , , E.S and Nam، نويسنده , , O.H and Sone، نويسنده , , C.S and Park، نويسنده , , Y.J. and Kim، نويسنده , , T.I، نويسنده ,
Abstract :
We have studied the effects of Si doping on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N multiple quantum wells (MQWs) by photoluminescence (PL) and time-resolved PL measurements. As increasing Si doping in the barriers, the PL shows an increase of emission intensity and a blueshift of peak energy. The 10 K recombination lifetime depends strongly on the Si doping level in the InGaN barriers, decreasing from ∼80 to ∼20 ns as the doping level is increased from 2×1018 to 1×1019 cm−3. The results of Si doping such as the increase of PL intensity, the blueshift of the emission peak, and the increase of recombination rate are discussed.
