Author/Authors :
Wang، نويسنده , , Li and Ma، نويسنده , , Zhongyuan and Huang، نويسنده , , Xinfan and Li، نويسنده , , Zhifeng and Li، نويسنده , , Hai-Jian and Bao، نويسنده , , Yun and Xu، نويسنده , , Jun and Li، نويسنده , , Wei and Chen، نويسنده , , Kunji، نويسنده ,
Abstract :
Raman and TEM measurements confirmed that the nc-Si/a-SiNx:H superlattices containing 3 nm nc-Si were fabricated by using rapid thermal annealing method which crystallized a-Si:H/a-SiNx:H superlattice. We observed the intensive room-temperature visible photoluminescence (PL) (710 nm) in nc-Si/a-SiNx:H superlattices. The presence of the Stokes shift between PL and absorption edge and the photons above the band gap indicates that radiative combination occurs not only between trap states of electrons and holes but also between quantized states of electrons and holes.
