Author/Authors :
Garcia-Belmonte، نويسنده , , Germà and Montero، نويسنده , , José M. and Ayyad-Limonge، نويسنده , , Yassid and Barea، نويسنده , , Eva M. and Bisquert، نويسنده , , Juan and Bolink، نويسنده , , Henk J.، نويسنده ,
Abstract :
Observation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and low positive bias and exhibit an ohmic character. Current density correlates with the perimeter-to-area ratio thus indicating that leakage currents are mainly confined on polymer regions in the vicinity of metallic contact limits (device perimeter).
