Title of article
Isotope effects in elemental semiconductors: a Raman study of silicon
Author/Authors
Widulle، نويسنده , , F. and Ruf، نويسنده , , T. and Konuma، نويسنده , , M and Silier، نويسنده , , I. and Cardona، نويسنده , , M. and Kriegseis، نويسنده , , W. and Ozhogin، نويسنده , , V.I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
22
From page
1
To page
22
Abstract
We present a comprehensive Raman study of self-energy effects in isotopically tailored silicon crystals at low temperature. Changes in the measured Raman spectra induced by isotope mass disorder are analyzed, including the weak excitations on the low-energy tail that arise approximately 30–60 cm−1 below the main Raman peak. In order to obtain a detailed picture of the renormalization, we simulate all lineshape properties within the framework of the coherent potential approximation. Comparison with earlier studies on diamond, germanium and α-tin illuminates the common aspects of isotope disorder-induced effects in elemental semiconductors.
Keywords
E. Inelastic light scattering , A. Semiconductors , A. Disordered systems , D. phonons
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1786638
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