Title of article :
Size-driven phase transition in stress-induced ferroelectric thin films
Author/Authors :
Zhang، نويسنده , , Jian and Yin، نويسنده , , Zhen and Zhang، نويسنده , , Ming-Sheng and Scott، نويسنده , , James F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
6
From page :
241
To page :
246
Abstract :
We have developed a concise phenomenological theory to investigate phase transitions and dielectric properties of ferroelectric thin films under stress. When the polarization at the surface is greater than that in the interior of the film, competition between the ‘superpolarized’ surface and tensile stress leads to a ferroelectric–paraelectric transition above a critical stress. This model is appropriate for the data on stress-induced barium–strontium titanate (BST) thin-film ferroelectric memory devices [Jpn. J. Appl. Phys. 36 (1997) 5846]. Stress–thickness phase diagrams are presented for PbTiO3 and BaTiO3 ferroelectric thin films.
Keywords :
A. Thin films , B. Epitaxy , D. Phase transitions , B. Laser processing , D. Dielectric response , A. Ferroelectrics
Journal title :
Solid State Communications
Serial Year :
2001
Journal title :
Solid State Communications
Record number :
1786739
Link To Document :
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