Exciton binding energy in V-shaped GaAs–Ga1−xAlxAs quantum wires

The exciton states in V-shaped GaAs–Ga1−xAlxAs quantum wires (V-QWRs) are investigated by a coordinate transformation method. The exciton binding energies for the first three exciton transitions are calculated. It is found that the exciton binding energy decreases with increasing the index of exciton states. The exciton binding energy increases with the decrease in the dimension of V-QWRs, to a peak value at a small width of V-QWRs and then decreases. The dependence of exciton binding energy on the curvatures of V-QWRs is different for different exciton transitions.