Title of article :
Tunneling escape process from a spin-polarized two-dimensional electron system
Author/Authors :
Luis، نويسنده , , D and D??az، نويسنده , , J.P and Ot?n، نويسنده , , C and Capuj، نويسنده , , N.E and Cruz، نويسنده , , H، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
In this work, we have numerically integrated in space and time the effective-mass nonlinear Schrِdinger equation for an electron wave packet in a double barrier heterostructure. Considering both polarized and unpolarized magnetic phases, we have studied the tunneling escape process from the two-dimensional electron gas. Due to the nonlinear effective-mass equation, it is found that the charge trapped dynamically in the quantum well produces a reaction field, which modifies the tunneling escape process in the quantum well. At different electronic sheet densities, we have shown the possibility of having magnetic phase-dependent tunneling rates.
Keywords :
A. Quantum wells , A. Semiconductors , D. Electron–electron interactions , D. Tunneling
Journal title :
Solid State Communications
Journal title :
Solid State Communications