Title of article
Room temperature UV emission of MgxZn1−xO films
Author/Authors
Jin، نويسنده , , Yanbo and Zhang، نويسنده , , Bei and Yang، نويسنده , , Shuming and Wang، نويسنده , , Yongzhong and Chen، نويسنده , , Jing and Zhang، نويسنده , , Huizhen and Huang، نويسنده , , Chunhui and Cao، نويسنده , , Changqi and Cao، نويسنده , , H. and Chang، نويسنده , , R.P.H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
409
To page
413
Abstract
II–VI wide band-gap semiconductor ternary MgxZn1−xO nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the MgxZn1−xO films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of MgxZn1−xO films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of MgxZn1−xO film is located at the range of 375–381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in MgxZn1−xO films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He–Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) MgxZn1−xO films exhibited a good quality for excitonic emission at RT.
Keywords
A. Thin film , A. Semiconductors , C. X-ray scattering , E. Luminescence
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1786987
Link To Document