Title of article
Local-field effects in reflectance anisotropy spectra of oxidized (001) GaAs and AlGaAs surfaces
Author/Authors
Berkovits، نويسنده , , V.L. and Gordeeva، نويسنده , , A.B. and Kosobukin، نويسنده , , V.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
647
To page
651
Abstract
Oxidized (001) surfaces of both GaAs crystals and Ga0.7Al0.3As alloys are found to exhibit characteristic reflectance anisotropy (RA) spectra in the range 1.5–5.5 eV. A microstructure model of GaAs/oxide interface is proposed to treat the observed spectra within a quasi-microscopic theory of reflectance anisotropy developed for multilayer dielectric arrangements. Quantitative agreement between measured and calculated RA spectra shows the principal spectral features to be related to local-field effects at the GaAs/oxide interface, which is typical of A3B5 compounds.
Keywords
A. Surfaces and interfaces , A. Semiconductors , C. Crystal structure and symmetry , D. Optical properties
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1787010
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