• Title of article

    Reversible charging effects on optical properties of porous silicon

  • Author/Authors

    Agarwal، نويسنده , , Vivechana and Lugo، نويسنده , , J.E and del R??o، نويسنده , , J.A، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    4
  • From page
    21
  • To page
    24
  • Abstract
    In our previous theoretical studies, through an effective medium approximation it was deduced that the effect of introducing charge is to decrease the absorption and coefficient of the material. In the present experimental studies porous silicon samples have been charged, depending on the current intensity, the intensity of the Photoluminescence Excitation response can be modulated in the energy range 1.5–2.6 eV. A decrease in the emission intensity with an increase in charging current has been observed. This effect is reversible and the recovery time is found to be in the range of 4–6 min. The variation of charging effect with the thickness of porous silicon layers has also been studied. An increase in the lowering of the intensity with an increase in thickness has been observed.
  • Keywords
    D. Dielectric response , A. Nanostuctures , D. Optical properties
  • Journal title
    Solid State Communications
  • Serial Year
    2001
  • Journal title
    Solid State Communications
  • Record number

    1787029