Title of article :
Reversible charging effects on optical properties of porous silicon
Author/Authors :
Agarwal، نويسنده , , Vivechana and Lugo، نويسنده , , J.E and del R??o، نويسنده , , J.A، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
4
From page :
21
To page :
24
Abstract :
In our previous theoretical studies, through an effective medium approximation it was deduced that the effect of introducing charge is to decrease the absorption and coefficient of the material. In the present experimental studies porous silicon samples have been charged, depending on the current intensity, the intensity of the Photoluminescence Excitation response can be modulated in the energy range 1.5–2.6 eV. A decrease in the emission intensity with an increase in charging current has been observed. This effect is reversible and the recovery time is found to be in the range of 4–6 min. The variation of charging effect with the thickness of porous silicon layers has also been studied. An increase in the lowering of the intensity with an increase in thickness has been observed.
Keywords :
D. Dielectric response , A. Nanostuctures , D. Optical properties
Journal title :
Solid State Communications
Serial Year :
2001
Journal title :
Solid State Communications
Record number :
1787029
Link To Document :
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