Study of structural changes in amorphous As2Se3 by EXAFS under in situ laser irradiation

We have used the Extended X-ray Absorption Fine-Structure (EXAFS) analysis to study the in situ changes in the local atomic structure, which are induced by bandgap laser (wavelength= 690 nm) irradiation of glassy As2Se3. The results indicate both the temporary and permanent light-induced changes in the atomic configuration around the Se but not the As atoms. Thus the Se–Se ‘defect’ bonds are the primary sites of the light-induced structural changes.