Title of article
Study of structural changes in amorphous As2Se3 by EXAFS under in situ laser irradiation
Author/Authors
Chen، نويسنده , , Gang and Jain، نويسنده , , Himanshu and Khalid، نويسنده , , Syed and Li، نويسنده , , Jun and Drabold، نويسنده , , David A. and Elliott، نويسنده , , Stephen R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
149
To page
153
Abstract
We have used the Extended X-ray Absorption Fine-Structure (EXAFS) analysis to study the in situ changes in the local atomic structure, which are induced by bandgap laser (wavelength= 690 nm) irradiation of glassy As2Se3. The results indicate both the temporary and permanent light-induced changes in the atomic configuration around the Se but not the As atoms. Thus the Se–Se ‘defect’ bonds are the primary sites of the light-induced structural changes.
Keywords
C. EXAFS , A. Chalcogenide glasses , D. Photoinduced phenomena , D. Radiation effects , A. Disordered systems
Journal title
Solid State Communications
Serial Year
2001
Journal title
Solid State Communications
Record number
1787050
Link To Document