Title of article :
Microscopic interface phonon modes in structures of GaAs quantum dots embedded in AlAs shells
Author/Authors :
Ren، نويسنده , , S.-F. and Qin، نويسنده , , G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
5
From page :
171
To page :
175
Abstract :
By means of a microscopic valence force field model, a series of novel microscopic interface phonon modes are identified in shell quantum dots (SQDs) composed of a GaAs quantum dot of nanoscale embedded in an AlAs shell of a few atomic layers in thickness. In SQDs with such thin shells, the basic principle of the continuum dielectric model and the macroscopic dielectric function are not valid any more. The frequencies of these microscopic interface modes lie inside the gap between the bulk GaAs band and the bulk AlAs band, contrary to the macroscopic interface phonon modes. The average vibrational energies and amplitudes of each atomic shell show peaks at the interface between GaAs and AlAs. These peaks decay fast as their penetrating depths from the interface increase.
Keywords :
C. Crystal structure and symmetry , A. Nanostructures , A. Semiconductors , D. phonons
Journal title :
Solid State Communications
Serial Year :
2002
Journal title :
Solid State Communications
Record number :
1787139
Link To Document :
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