Title of article
Anomalous temperature dependence of photoluminescence from a-C:H film deposited by energetic hydrocarbon ion beam
Author/Authors
Liao، نويسنده , , Meiyong and Feng، نويسنده , , Zhihog and Yang، نويسنده , , Shaoyan and Chai، نويسنده , , Chunlin and Liu، نويسنده , , Zhikai and Yang، نويسنده , , Junling and Wang، نويسنده , , Zhanguo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
287
To page
290
Abstract
The temperature dependence of photoluminescence (PL) from a-C:H film deposited by CH3+ ion beam has been performed and an anomalous behavior has been reported. A transition temperature at which the PL intensity, peak position and full width at the half maximum change sharply was observed. It is proposed that different structure units, at least three, are responsible for such behavior. Above the transition point, increasing temperature will lead to the dominance of non-radiative recombination process, which quenches the PL overall and preferentially the red part. Possible emission mechanisms have been discussed.
Keywords
A. Semiconductors , B. Ion-beam deposition , E. Luminescence
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1787188
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