Author/Authors :
Choi، نويسنده , , D.S. and Rheem، نويسنده , , Y. and Yoo، نويسنده , , B. and Myung، نويسنده , , N.V. and Kim، نويسنده , , Y.K.، نويسنده ,
Abstract :
We report the measurement of the electrical resistivity of a vertical single Ni nanowire. A vertical array of Ni nanowires was fabricated on a Si substrate by electrodeposition using a nanoporous alumina template. The Ni nanowires possessed a face-centered-cubic polycrystalline structure. A voltage-applied atomic force microscope was used to make a nanometer-scale point contact on top of the vertical grown single Ni nanowire. The measured resistance was 1.1 MΩ for a nanowire with length of 3 μm and diameter of 20 nm.