Design of GaN/AlGaN quantum wells for maximal intersubband absorption in 1.3<λ<2 μm wavelength range

The design of rectangular GaN/AlGaN quantum wells for maximal intersubband absorption in the near infrared wavelength range 1.3–2 μm, on the 0→1 electronic transition is considered, taking into account the effects of internal polarization fields and nonparabolicity. The nonlinear optimization method based on solving a system of nonlinear equations is employed in finding the structural parameters which give the maximal dipole matrix element while keeping the absorption peak at the desired wavelength.