Title of article :
Low voltage red phosphorescent organic light-emitting devices with triphenylphosphine oxide and 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl electron transport layers
Author/Authors :
Kim، نويسنده , , Tae-Yong and Moon، نويسنده , , Dae-Gyu، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2010
Pages :
4
From page :
1108
To page :
1111
Abstract :
We have developed red phosphorescent organic light-emitting devices operating at low voltages by using triphenylphosphine oxide (Ph3PO) and 4,4′-bis(2,2′-diphenylvinyl)-1,1′-biphenyl (DPVBi) electron transport layers. 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) and tris-(1-phenylisoquinolinolato-C2,N) iridium(III) [Ir(piq)3] were used as host and guest materials, respectively. Small voltage drops across the electron transport layers and direct injection of holes from 4,4′,4″-tris[N-(2-naphthyl)-N-phenyl-amino]-triphenylamine (2-TNATA) hole transport layer into the Ir(piq)3 guests are responsible for the high current density at low voltage, resulting in a high luminance of 1000 cd/m2 at low voltages of 2.8–3.0 V in devices with a structure of ITO/2-TNATA/CBP:Ir(piq)3/DPVBi/Ph3PO/LiF/Al.
Keywords :
Organic light-emitting device , Phosphorescence , Driving-voltage , Electron transport layer
Journal title :
Current Applied Physics
Serial Year :
2010
Journal title :
Current Applied Physics
Record number :
1787249
Link To Document :
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