Title of article :
Effect of Er3+ doping in SnO2 semiconductor nanoparticles synthesized by solgel technique
Author/Authors :
Sambasivam، نويسنده , , S. and Kim، نويسنده , , Saes Byul and Jeong، نويسنده , , Jung Hyun and Choi، نويسنده , , Byung Chun and Lim، نويسنده , , Kwon-Taek and Kim، نويسنده , , Sang Su and Song، نويسنده , , Tae Kwon، نويسنده ,
Issue Information :
دوماهنامه با شماره پیاپی سال 2010
Pages :
4
From page :
1383
To page :
1386
Abstract :
Pure and Er3+ doped SnO2 semiconductor nanoparticles have been synthesized by solgel technique. The X-ray diffraction patterns show peaks corresponding to tetragonal structure of SnO2. No Er related impurity peaks could be observed. From the TEM micrographs average crystallite size was estimated to be 12 nm. The UV–visible absorption spectra of SnO2:Er showed blue shift in the absorption shoulder compared with the spectra of undoped SnO2 sample. Photoluminescence emission intensity of SnO2:Er nanoparticles was found to be quenched with increasing concentration of Er3+ ions. The electron spin resonance (ESR) analysis of Er doped SnO2 nanoparticles indicated Er in 3 + state with g = 2.
Keywords :
bandgap , Photoluminescence , semiconductor nanoparticles , SnO2:Er
Journal title :
Current Applied Physics
Serial Year :
2010
Journal title :
Current Applied Physics
Record number :
1787437
Link To Document :
بازگشت