Title of article :
Frequency dependent conductivity and dielectric studies on RbSn2F5
Author/Authors :
Ahmad، نويسنده , , M.M and Yamada، نويسنده , , K and Okuda، نويسنده , , T، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
The ac electrical data of RbSn2F5 are analyzed in the σ∗(f), M∗(f) and ε∗(f) formalisms. The ac conductivity exhibited a power law behavior with the presence of low frequency dispersion at high temperatures. The conductivity relaxation time is determined from the maximum of the peaks of the modulus formalism associated with an activation energy of 0.56 eV, which agrees well with the dc conductivity activation energy, ΔEσ=0.55 eV, suggesting a hopping mechanism for the ionic conduction. A huge increase of the dielectric permittivity is observed at low frequency due to space charge polarization. The dielectric relaxation phenomena were detected from the peaks of the frequency dependence of the dissipation factor, tan δ. The activation energy and the relaxation time of the dielectric relaxation have been determined.
Keywords :
RbSn2F5 , Dielectric loss , Dielectric Permittivity , Conductivity relaxation
Journal title :
Solid State Communications
Journal title :
Solid State Communications