Title of article
Frequency dependent conductivity and dielectric studies on RbSn2F5
Author/Authors
Ahmad، نويسنده , , M.M and Yamada، نويسنده , , K and Okuda، نويسنده , , T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
185
To page
189
Abstract
The ac electrical data of RbSn2F5 are analyzed in the σ∗(f), M∗(f) and ε∗(f) formalisms. The ac conductivity exhibited a power law behavior with the presence of low frequency dispersion at high temperatures. The conductivity relaxation time is determined from the maximum of the peaks of the modulus formalism associated with an activation energy of 0.56 eV, which agrees well with the dc conductivity activation energy, ΔEσ=0.55 eV, suggesting a hopping mechanism for the ionic conduction. A huge increase of the dielectric permittivity is observed at low frequency due to space charge polarization. The dielectric relaxation phenomena were detected from the peaks of the frequency dependence of the dissipation factor, tan δ. The activation energy and the relaxation time of the dielectric relaxation have been determined.
Keywords
RbSn2F5 , Dielectric loss , Dielectric Permittivity , Conductivity relaxation
Journal title
Solid State Communications
Serial Year
2002
Journal title
Solid State Communications
Record number
1787438
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