Title of article :
A computer simulation study of defects in PbTiO3 crystals
Author/Authors :
Man، نويسنده , , Z.Y. and Feng، نويسنده , , X.Q.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
Computer simulations have been performed on the defects of PbTiO3 in the ferroelectric tetragonal phase. Defect formation energies are calculated, which suggest the concentration of intrinsic atomic defects is quite low even at room temperatures. Also, PTO is found to be more resistant to oxidation than reduction. The oxygen migration energy is calculated to be 0.78 eV and oxygen ions were found to follow a slightly curved trajectory on hopping between adjacent vacancy sites.
Keywords :
D. Computer simulation , D. Defects , A. PbTiO3 crystal
Journal title :
Solid State Communications
Journal title :
Solid State Communications