On the crystallization kinetics of amorphous Se80In20−xPbx

The thermal crystallization behavior of bulk amorphous semiconducting Se80In20−xPbx (x=0, 2, 6 and 10) glasses has been studied by differential scanning calorimetry (DSC) using non-isothermal measurement with different heating rates. The glass transition temperature, crystallization temperature at different heating rates and structural change during glass transition have been determined using an empirical relation. The dependence of the glass transition temperature (Tg), crystallization temperatures (Tc), the activation energy for structural relaxation (ΔEt), the activation energy of crystallization (ΔEc), crystallization enthalpy (ΔHc) and the order parameter (n) are calculated at different heating rates. On the basis of the obtained experimental data, the temperature difference Tc−Tg and the enthalpy released ΔHc are found to be maximum and minimum, respectively, for Se80In14Pb6 glass, which indicate that this glass is thermally most stable in the composition range under investigation.