Spin-injection across a magnetic–electric barrier structure

In this paper, we propose a new structure for performing the spin-injection in semiconductors based on the combination of a triangular electrical barrier and non-homogeneous magnetic fields in a two-dimensional electron gas. Using the single particle effective mass approximation, the spin-polarized transport properties are calculated for this structure. An obvious spin-polarization effect is observed and strongly depends on the incident wave vector parallel to the barrier, the incident electron energy and the height of the electrical potential. The spin-injection rate is found to be more susceptible to the electrical potential and the magnetic field.